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P209: Ultra-Wide Bandgap Semiconductor and other Advanced Semiconductor-IFWS

IFWS Series Conferences


In recent years, people continue to get a breakthrough in the research and application of ultra-wide bandgap semiconductor materials represented by diamond, gallium oxide, aluminum nitride, boron nitride, etc. The ultra-wide bandgap semiconductor materials have a larger bandgap, higher thermal conductivity and better material stability, which have significant advantages and great potential for developing new generation of deep ultraviolet optoelectronic devices, high voltage/power electronic devices and other significant applications. This session focuses on the fabrication of the ultra-wide bandgap semiconductor materials, process technology, key equipment and device applications, aims at building a high-quality exchange platform for the communication among industry, academia and capital, discusses the new technologies and new trends of the ultra-wide bandgap semiconductor materials and devices.


Session Chairs

LIU Ming——Professor of Institute of Microelectronics of Chinese Academy of Sciences, Academician of Chinese Academy of Sciences

WANG Hongxing——Professor of Xi'an Jiaotong University

Session Members

ZHANG Jincheng——Associate Dean and Professor of Xidian University

LONG Shibing——Professor of Institute of Microelectronics of Chinese Academy of Sciences

WANG Xinqiang——Professor of Peking University

TAO Xutang——Director and Professor of State Key Lab of Crystal Materials, Shandong University


P209:超宽禁带半导体技术/ Technologies for Ultra-Wide Bandgap Semiconductor

时间:20191126日上午09:00 -12:00

地点:深圳会展中心•五层玫瑰厅2

Time: Nov 26th, 2018 Morning 09:00-12:00

Location: Shenzhen Convention and Exhibition Center 5th Floor Rose Hall 2

演示文件建议尺寸比例/Recommend Slides Size4:3

主持人

Moderator

刘明/LIU Ming

中国科学院微电子研究所研究员,中国科学院院士/Professor of Institute of Microelectronics of Chinese Academy of SciencesAcademician of Chinese Academy of Sciences

王宏兴/WANG Hongxing   

西安交通大学教授/Professor of Xi'an Jiaotong University

09:00-09:25

超宽禁带氧化半导体的生长和特性

Growth and Characterization of Ultra-Wide Bandgap Oxide Semiconductors

郭其新 日本国立佐贺大学同步辐射光应用研究中心主任、电气电子系教授

Qixin GUO    Director and Professor of Synchrotron Light Application Center, Saga University, Japan

09:25-09:50

氧化镓超宽禁带半导体器件

Gallium Oxide Ultra-Wide Bandgap Semiconductor Devices

龙世兵中国科学院微电子所研究员,中国科学技术大学微电子学院执行院长

LONG ShibingProfessor of institute of microelectronics, CAS; Executive Dean of microelectronics college, University of Science and Technology of China

09:50-10:15

金刚石超宽禁带半导体材料和器件新进展

Progress of diamond ultra-wide-band-gap semiconductor material and devices

张金风   西安电子科技大学教授

ZHANG JinfengProfessor of Xidian University

10:15-10:30

茶歇/Coffee Break

10:30-10:55

多晶金刚石微纳米粉在碳化硅晶圆加工中的应用及其关键工艺技术

Application of Polycrystalline Diamond Micro-nano Powder in SiC Wafer Processing and Its Key Process Technology

Christian JENTGENS瑞士Microdiamant研发部门负责人

Christian JENTGENS    Head of R&D department, Microdiamant, Switzerland

10:55-11:20

氮化铝/蓝宝石模板上六方氮化硼薄膜的有机金属气相外延研究

Epitaxial Growth of Hexagonal Boron Nitride Films on AlN/Sapphire Templates by MOVPE

刘玉怀    郑州大学教授, 日本名古屋大学客座教授

LIU Yuhuai    Professor of Zhengzhou University, Visiting Professor of Nagoya University

11:20-11:45

六方氮化硼薄膜的磁控溅射制备及光电特性

Preparation and photoelectric properties of BN films by RF-sputtering

李强 西安交通大学副教授

LIQiangAssociateProfessorof Xi’an Jiaotong University

11:45-12:00

高质量h-BN薄层和针对III族氮化物外延的缓冲层应用

High quality h-BN thin films and their application as flexible buffer layer for III-nitrides epitaxy

刘放    北京大学

LIU Fang    Peking University