FORUM
Exhibition
ONLINE
TEL
Tel:010-82387600
TOP

P209: Ultra-Wide Bandgap Semiconductor and other Advanced Semiconductor-IFWS

IFWS Series Conferences


In recent years, people continue to get a breakthrough in the research and application of ultra-wide bandgap semiconductor materials represented by diamond, gallium oxide, aluminum nitride, boron nitride, etc. The ultra-wide bandgap semiconductor materials have a larger bandgap, higher thermal conductivity and better material stability, which have significant advantages and great potential for developing new generation of deep ultraviolet optoelectronic devices, high voltage/power electronic devices and other significant applications. This session focuses on the fabrication of the ultra-wide bandgap semiconductor materials, process technology, key equipment and device applications, aims at building a high-quality exchange platform for the communication among industry, academia and capital, discusses the new technologies and new trends of the ultra-wide bandgap semiconductor materials and devices.


Session Chairs

LIU Ming——Professor of Institute of Microelectronics of Chinese Academy of Sciences, Academician of Chinese Academy of Sciences

TAO Xutang——Director and Professor of State Key Lab of Crystal Materials, Shandong University

Session Members

ZHANG Jincheng——Associate Dean and Professor of Xidian University

LONG Shibing——Professor of Institute of Microelectronics of Chinese Academy of Sciences

WANG Xinqiang——Professor of Peking University

LIU Yuhuai——Professor of Zhengzhou University

WANG Hongxing——Professor of Xi'an Jiaotong University


P209:超宽禁带半导体技术 / Technologies for Ultra-Wide Bandgap Semiconductor Technology

时间:20201124日上午09:00 -12:00

地点:深圳会展中心•五层玫瑰厅2

Time: Nov 24th, 2020 Morning 09:00-12:00

Location: Shenzhen Convention and Exhibition Center 5th Floor Rose Hall 2

主持人

Moderator

刘明/LIU Ming

中国科学院微电子研究所研究员,中国科学院院士/Professor of Institute of Microelectronics of Chinese Academy of SciencesAcademician of Chinese Academy of Sciences

陶绪堂 / TAO Xutang

山东大学晶体材料国家重点实验室主任、教授/Director and Professor of State Key Lab of Crystal Materials, Shandong University

09:00-09:25

超宽带隙氧化镓的低温生长和表征  Low Temperature Growth and Characterization of Ultrawide Bandgap Gallium Oxide Based Semiconductors

郭其新--日本国立佐贺大学同步辐射光应用研究中心主任、电气电子系教授

Qixin GUO--Director and Professor of Synchrotron Light Application Center, Saga University, Japan

09:25-09:50

极宽禁带半导体氧化镓单晶掺质之实践与思考

Speculating and Execution on Doping of Extreme Bandgap Semiconductor Gallium Oxide Single Crystal

夏长泰--上海光学精密机械研究所研究员

XIAChangtai--Professor of Shanghai Institute of Optics and Fine Mechanics, CAS

09:50-10:10

高性能基于氧化镓的日盲光电探测器的开发Development of high-performance Ga2O3-based solar-blind photodetectors

何云斌--湖北大学材料工程学院教授

HE Yunbin--Professor of School of Materials Science & EngineeringHubei University

10:10-10:30

磁控溅射沉积hBN薄膜的最新进展Recent Advances of hBN Films by Magnetron Sputtering Deposition

李强--西安交通大学副教授

LIQiang--Associate Professor of Xi’an Jiaotong University

10:30-10:45

茶歇/Coffee Break

10:45-11:10

金刚石衬底上六方相氮化硼薄膜的有机金属气相外延

Epitaxial growth of hexagonal boron nitride films on diamond substrates by MOVPE

刘玉怀--郑州大学教授、河南省电子材料与系统国际联合实验室国家电子材料与系统国际联合研究中心主任

LIUYuhuai--Professorof Zhengzhou University

11:05-11:25

先进的光电、功率和射频技术解决方案

Advanced Solutions for Optoelectronics, Power and Radio Frequency Technologies

方子文--德国爱思强股份有限公司 市场和工艺部门经理

FANGZiwen--Marketing and Process SupportAixtron China Limited

11:25-11:45

温度梯度对PVT法生长AlN晶体的影响Effect of temperature gradient on AlN crystal growth by PVT method

张雷--山东大学晶体材料国家重点实验室副教授

ZHANG Lei--Associate Professor of State Key laboratory of Crystal Material,Shandong University

11:45-12:05

High Performance β-Ga2O3 vertical Schottky Barrier Diodes

王元刚--中国电科十三所重点实验室高级工程师

WANGYuangang--Senior Engineer of Hebei Semiconductor Research Institute

12:05-14:00

午休/Adjourn