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P204: Solid-State Ultraviolet Device Technology-SSLCHINA & IFWS

SSLCHINA & IFWS Series Conference


In recent years, people continue to get a breakthrough in the research and application of ultra-wide bandgap semiconductor materials represented by diamond, gallium oxide, aluminum nitride, boron nitride, etc. The ultra-wide bandgap semiconductor materials have a larger bandgap, higher thermal conductivity and better material stability, which have significant advantages and great potential for developing new generation of deep ultraviolet optoelectronic devices, high voltage/power electronic devices and other significant applications. This session focuses on the fabrication of the ultra-wide bandgap semiconductor materials, process technology, key equipment and device applications, aims at building a high-quality exchange platform for the communication among industry, academia and capital, discusses the new technologies and new trends of the ultra-wide bandgap semiconductor materials and devices.


Session Chairs

WANG Junxi——Professor of Institute of Semiconductors, Chinese Academy of Sciences; Deputy Director of Research and Development Center for Semiconductor Lighting Chinese Academy of Sciences

KANG Junyong——Professor of Xiamen University

Session Members

LU Hai——Professor of School of Electronics Science and Engineering of Nanjing University

KUO Hao-Chung——Distinguished Professor at National Chiao Tung University

LI Xiaohang——Associate Professor at King Abdullah University of Science & Technology


P204:固态紫外器件技术/ Solid-State Ultraviolet Device Technology

时间:20191127日 上午 09:00 -12:00

地点:深圳会展中心•六层水仙厅  (PPT显示比例:16:9)

Time: Nov 27th, 2019 Morning 09:00 -12:00

Location: Shenzhen Convention and Exhibition Center 6th Floor Narcissus Hall   PPT scale  16:9

主持人

Moderator

康俊勇/KANG Junyong

厦门大学教授/Professor of Xiamen University

王军喜/ WANG Junxi

中科院半导体所研究员、半导体照明研发中心主任/ Professor and Director of R&D Center for Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences

09:00-09:25

采用石墨烯衬底和透明底部电极的AlGaN纳米线外延 UV LED

AlGaN nanowire UV LED using graphene as substrate and transparent bottom electrode

Helge WEMAN    挪威科学技术大学教授,挪威科学技术院院士

Helge WEMAN    Professor at the Norwegian University of Science and Technology (NTNU), Norway; Academician of the Norwegian Academy of Technical Sciences (NTVA)

09:25-09:50

基于宽禁带半导体以及相关应用的UV检测仪器发展现状

Recent Development of UV Photodetectors based on Wide Bandgap Semiconductors and Their Applications

  海  南京大学教授

LU Hai    Professor of Nanjing University

09:50-10:15

新型深紫外LED封装发光技术提升

Improvement of Light extraction of Deep UV LED using Novel package

郭浩中  台湾交通大学特聘教授

Hao-Chung(Henry)  KUODistinguished Professor at National Chiao Tung University

10:15-10:35

基于中微Prismo HiT3TM MOCVD设备的深紫外LED结构优化

Optimization of AlGaN Based UVC LED Structure with AMEC Prismo HiT3 MOCVD Platform

胡建正 中微半导体设备(上海)股份有限公司主任工艺工程师

HUJianzheng    Principle Member of Technical Stuff of AMEC

10:35-10:50

茶歇/Tea Break

10:50-11:15

大批量工艺制备的高质量氮化铝模板材料表征分析

Characterization of high-quality AlN templates in industrial massive production

  亮  上海大学教授、Ultratrend Technologies Inc总裁

WULiangProfessor of Shanghai University, CEOof Ultratrend Technologies Inc

11:15-11:35

基于氮化物半导体和碳化硅光电子器件的仿真与分析

Numerical modelling and experimental demonstration for Nitride and SiC optoelectronic devices

张紫辉 河北工业大学教授

ZHANGZihuiProfessorof Hebei University of Technology

11:35-11:45

直接在4英寸高温退火溅射AlN模板上生长的AlGaN基紫外LED

AlGaN-based UV LED directly grown on 4-inch high-temperature annealed sputtered AlN template

倪茹雪 中科院半导体所

NI RuxueInstitute of Semiconductors, Chinese Academy of Sciences

11:45-11:55

采用n-AlxGa1-xN低波导层连续分级生长的深紫外纳米线激光二极管光学约束优化

Enhancement of Optical Confinement in Deep Ultraviolet Nanowire Laser Diode by Continuous-grading of n-AlxGa1-xN Lower Waveguide Layer.

Muhammad Nawaz Sharif郑州大学

Muhammad Nawaz SharifZhengzhou University

11:55-12:05

可原子尺度精确调控的AlN/GaN结构分选生长

Digital-alloyed AlN/GaN superlattices featuring with integral monolayer scale by hierarchical growth units

  娜 厦门大学

GAONaXiamenUniversity

12:05-12:15

用于DUVEUV探测的高性能SiC肖特基势垒光电二极管

High-Performance SiC Schottky barrier photodiode for DUV and EUV detection

王致远  南京大学

WANGZhiyuanNanjingUniversity

12:30-14:00

午休/Adjourn