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P203: RF Technology and 5G Mobile Communication-IFWS

IFWS Series Conferences


Featured with High frequency, high efficiency and high power, the wide band gap semiconductor GaN based RF devices are now representing the great potential for the new generation of mobile communication technology. The breakthrough in this specific area is the new strategic highland of global semiconductor industry. The topics in this session cover GaN microwave devices and MMIC epitaxy, model, design and manufacturing, reliability and applications in mobile communications. The domestic and foreign well-known experts will be invited to give talks in this session. The latest progress of microwave devices and applications in wide bandage semiconductor will be presented.


Session Chairs

CAI Shujun——Professor and the Deputy Director of the 13th Research Institute of China Electronics Technology Group Corporation

ZHANG Naiqian——Chairman of Dynax Semiconductor Inc.

Session Members

CHEN Tangsheng——Chief Scientist of Nanjing Electronic Devices Institute

LIU Jianli——PA Chief Engineer at ZTE Corporation

AO Jinping——Professor of the University of Tokushima, Professor of Xidian University

ZHANG Yun——Professor and Assistant to Director of the Institute of semiconductors, Chinese Academy of Sciences

TAO Guoqiao——Wafer-Level-Reliability Expert at Ampleon Netherlands B.V., the Netherlands

P203:微波射频与5G移动通信 / RF Technology and 5G Mobile Communication

时间:20201125日下午14:00-17:30

地点:深圳会展中心•五层玫瑰厅1

Time: Nov25th, 2020 14:00-17:30

Location: Shenzhen Convention and Exhibition Center 5th Floor Rose Hall1

主持人

Moderator

蔡树军/CAI Shujun

河北半导体研究所副所长 / The Deputy Director ofHebei Semiconductor Research Institute

张乃千/ ZHANG Naiqian

苏州能讯高能半导体有限公司董事长/President of Dynax Semiconductor Inc.

14:00-14:25

高线性氮化镓微波功率器件研究

Research on High Linearity GaN Microwave Power Devices

马晓华--西安电子科技大学微电子学院副院长、教授

MAXiaohua--Professor&DeputyDeanof SchoolofMicroElectronics,Xidian University

14:25-14:50

面向5G/卫星通信应用的化合物半导体射频芯片技术

Compound semiconductor RF chip technology for 5G /Satellite communication applications

黄伟--复旦大学微电子学院研究员

HUANG Wei    Professor ofMicroelectronics School, Fudan University

14:50-15:10

针对5G基站氮化镓射频HEMT的失效分析研究

Failure analysis of GaN HEMT applied in 5G base station

蔡小龙--中兴通讯高级技术预研工程师

CAIXiaolong    Senior technology Pre-research Engineer of ZTE Corporation

15:10-15:30

SiCGaN射频材料热阻的研究进展

唐军--中电化合物半导体有限公司研发总监

TANGJun   Director of R&D, CEC compound semiconductor Co., Ltd

15:30-15:45

茶歇/Coffee Break

15:45-16:10

从实验室到晶圆厂:实现卓越的GaN RF功率制造的实践和挑战

From Lab to Fab: Practices and challenges in achieving GaN RF Power manufacturing excellence

陶国桥--荷兰Ampleon Netherlands B.V. 可靠性首席工程师

TAOGuoqiao    Wafer-Level-Reliability Expert at Ampleon Netherlands B.V., the Netherlands

16:10-15:30

射频氮化镓现状和未来展望

Current Status and Future Prospects of RF Gallium Nitride

戈黎明--华为技术有限公司部长

GE Liming--Head of Wireless Base Station Platform Hardware Development Department, Huawei Technologies Co., Ltd.

16:30-16:50

SiGaN射频器件的关键技术研究进展

Technological developments in pursuit of high-performance GaN based HEMTs for RF amplifier applications

汪青--南方科技大学深港微电子学院副教授

WANGQingAssociate Professor of School of Microelectronics, Southern University of Science and Technology

16:50-17:15

用于无线充电和功率传输的基于GaN肖特基势垒二极管的微波整流器

GaN Schottky Barrier Diode Based Microwave Rectifier for Wireless Charging and Power Transmission

李杨--西安电子科技大学微电子学院

LIYang    School of Microelectronics, Xidian University