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P203: RF Technology and 5G Mobile Communication-IFWS

IFWS Series Conferences


Featured with High frequency, high efficiency and high power, the wide band gap semiconductor GaN based RF devices are now representing the great potential for the new generation of mobile communication technology. The breakthrough in this specific area is the new strategic highland of global semiconductor industry. The topics in this session cover GaN microwave devices and MMIC epitaxy, model, design and manufacturing, reliability and applications in mobile communications. The domestic and foreign well-known experts will be invited to give talks in this session. The latest progress of microwave devices and applications in wide bandage semiconductor will be presented.


Session Chairs

CAI Shujun——Professor and the Deputy Director of the 13th Research Institute of China Electronics Technology Group Corporation

ZHANG Naiqian——Chairman of Dynax Semiconductor Inc.

Session Members

CHEN Tangsheng——Chief Scientist of Nanjing Electronic Devices Institute

LIU Jianli——PA Chief Engineer at ZTE Corporation

AO Jinping——Professor of the University of Tokushima, Professor of Xidian University

ZHANG Yun——Professor and Assistant to Director of the Institute of semiconductors, Chinese Academy of Sciences

TAO Guoqiao——Wafer-Level-Reliability Expert at Ampleon Netherlands B.V., the Netherlands


P203:微波射频与5G移动通信/ RF Technology and 5G Mobile Communication

时间:20191127日上午09:00-12:00

地点:深圳会展中心 • 五层玫瑰厅(PPT显示比例:4:3)

Time: Nov27th, 2019 09:00-12:10

Location: Shenzhen Convention and Exhibition Center 5th Floor Rose Hall1    PPT scale 4:3

主持人

Moderator

蔡树军/CAI Shujun

河北半导体研究所副所长 / The Deputy Director ofHebei Semiconductor Research Institute

张乃千/ ZHANG Naiqian

苏州能讯高能半导体有限公司董事长/President of Dynax Semiconductor Inc.

09:00-09:25

适用于第五代行动通讯六吋氮化镓微波功放技術及基站功率电源模块The Epi structure and Process Considerations of 6-inch GaN RF HEMT for 5G applications

邱显钦 台湾长庚大学教授

Hsien-Chin CHIU    Professorof Chang Gung University

09:25-09:50

High frequeny GaN HEMTs and MMICs

Peter BRÜCKNER    德国弗劳恩霍夫应用固体物理研究所部门技术部门经理

Peter BRÜCKNER Group Manager of Fraunhofer Institute of Applied Solid State Physics

09:50-10:15

5G 毫米波应用5G mm Wave

刘建利    中兴无线技术总工及技术委员会专家

LIUJianli    Chief Engineer of Wireless Technology of ZTE, Expert of ZTE Technical Committee

10:15-10:35

高频硅基氮化镓晶体管

High-frequency GaN-on-Si transistors

刘志宏   西安电子科技大学教授

LIU Zhihong   Professor of Xidian University

10:35-10:50

茶歇/Coffee Break

10:50-11:15

 5G用毫米波Doherty功率放大器的研制

Development of a 5G Doherty power amplifier with a millimeter wave

张志国  北京国联万众半导体科技有限公司副总经理

Zhang Zhiguo  Deputy General Manager of Beijing advance semiconductor Co.,ltd

11:15-11:35

一种新型毫米波氮化镓高线性晶体管

High-linearity GaN HEMTs for millimeter-wave applications

  凯  南京电子器件研究所高级工程师

ZHANGKai    Senior Engineer of Nanjing Electronic Devices Institute

11:35-11:55

一种用于微波半导体芯片测试的高集成度多参数射频收发模块设计方法

A Highly Integrated Multi-Parameters RF Module for Microwave Semiconductor Testing

张光山 中国电子科技集团第41研究所

ZHANGGuangshan    The 41st Research Institute of CETC

11:55-12:10

A Compact X-band Pallet Power Amplifier Using GaN MMIC and Discrete FETs with HMIC Technology

    河北半导体研究所

Yi Wang  Hebei semiconductor Research Institute

12:10-14:00

午休与POSTER交流 /Adjourn&POSTERCommunication