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P202: Technologies for Power Electronics and Packaging -IFWS

IFWS Series Conferences


As typical of Wide band-gap semiconductor materials, SiC and GaN represent the development direction of power electronic devices, and have great potential application in the new generation of electric power conversion and management system with high efficiency and small size such as electric vehicles, industrial motors, etc.

SiC/GaN power devices with novel structures and processes, gate drive design, the design and manufacture of power modules with high speed and high efficiency, reliability and applications in SiC/GaN based power system, etc. The latest progress in power electronic devices based on SiC and GaN will be presented.


Session Chairs

    SHENG Kuang——Professor of Zhejiang University

ZHANG Bo——Professor of University of Electronic Science and Technology of China

International Session Chairs:

G.Q. LU——Professor of Tianjin UniversityProfessor of Virginia Polytechnic Institute and State University

Wai Tung NG——Professor at University of Toronto, Canada

Session Members

BAI Song——Professor of Nanjing Electronic Devices Institute

ZHANG Jincheng——Professor of Xidian University

LIANG Huinan——General Manager of Xinguan Technology

WANG Laili——Professor of Xi’an Jiaotong University

LIU Yang——Professor of Sun Yat-sen University

P202:功率电子器件及封装技术 / Technologies for Power Electronics and Packaging

时间:20201125日全天09:00-17:30

地点:深圳会展中心•六层•茉莉厅

Time: Nov 25th, 2020 09:00-17:30

Location: Shenzhen Convention and Exhibition Center 6th Floor Jasmine Hall

屏幕尺寸16:9

主持人

Moderator

张波/ZHANGBo  

电子科技大学教授 /Professor of University of Electronic Science and Technology of China

 /LIU Yang

中山大学电力电子及控制技术研究所所长,教授/LIU YANG--Director of Institute of power electronics and control technologySun Yat-sen University

09:00-09:25

GaN Power Electronics and Associated Fundamental Limits

Huili Grace XING--美国康奈尔大学电气和计算机工程教授

Huili Grace XING--William L. Quackenbush Professor of Electrical and Computer Engineering, Cornell University

09:25-9:50

SiGaN功率器件及其电源系统的关键技术研究进展Research on Si-based GaN power device and its related power supply systems

于洪宇--南方科技大学深港微电子学院院长、教授

YUHongyu--Professor & Dean of School of Microelectronics, Southern University of Science and Technology

9:50-10:10

硅基氮化镓增强型HEMT电力电子器件GaN-based E-mode HEMTs Grown on Si

孙钱--中国科学院苏州纳米技术与纳米仿生研究所研究员

SUNQian--Professor of Suzhou Institue of Nano-Tech and Nano-Bionics, CAS

10:10-10:30

 

氮化镓MIS结构界面相关陷阱态:物性、表征及模型The Interface Related Traps in GaN MIS Structures: Physical Properties, Characterization and Modelling

王茂俊--北京大学副教授

WANG Maojun--Associate Professor of Peking University

10:30-10:45

茶歇/Coffee Break

10:45-11:05

宽禁带功率器件的宇航应用技术Aerospace application technology of wide bandgap power devices

万成安--中国空间技术研究院北京卫星制造厂宇航电源产品首席专家

WAN Cheng'an--Chief Scientist of Aerospace Power Products of Beijing Spacecrafts Manufacturing Factory, China Academy of Space Technology

11:05-11:35

基于超薄势垒AlGaN/GaN异质结与混合阳极二极管技术的微波混频器与功率整流器Hybrid-Anode-Diode Technique on Ultra-Thin-Barrier AlGaN/GaN  Heterostructure for Zero-bias Microwave Mixer and Power Diode

周琦--电子科技大学教授

ZHOU Qi--Professor of University of Electronic Science and Technology of China

11:35-11:50

大尺寸外延剥离实现高性能GaNHEMT

Large-area Epitaxial Lift-off for High Performance GaN HEMT

王幸福--华南师范大学教授

WANGXingfu--Professorof South China Normal University

11:50-12:05

八英寸硅基氮化镓产业化进展Progress of 8 inch GaN-on-Si industrialization

谢文元-- 英诺赛科(珠海)科技有限公司工艺制程开发总监

Andy Hsieh --Director of Process Development InnoScience (Zhuhai) Technology co. Ltd

12:05-12:15

凹槽深度对GaN槽栅型纵向导通晶体管电学特性的影响研究Research on the Influence of Groove Depth on the Conduction Characteristics of GaN Vertical Trench MOSFETs

黎城朗--中山大学

LIChenglang--Sun Yat-sen University

 

 

11:55-14:00

午休与POSTER交流 /Adjourn&POSTERCommunication

氮化硅专场     P202:功率电子器件及封装技术 / Technologies for Power Electronics and Packaging

时间:20201125日全天14:00-17:30

地点:深圳会展中心•六层•茉莉厅

Time: Nov 25th, 2020 09:00-17:30

Location: Shenzhen Convention and Exhibition Center 6th Floor Jasmine Hall

主持人

盛况/SHENG Kuang

浙江大学特聘教授,电气工程学院院长 / Distinguished Professor, Dean of the College of Electrical Engineeringof Zhejiang University

肖国伟/ Dr. David G.W. Xiao

广东晶科电子股份有限公司董事长兼总裁/Chairman and President,APT Electronics Co., Ltd.

14:00-14:25

超窄体(UNBMOSFET”和“接地窄而深pGNDMOSFET”的4H-SiC MOSFET的新挑战性结构“The 4H-SiC MOSFET new challenging structuresof“Ultra-Narrow-Body (UNB) MOSFET” and “Grounded Narrow and Deep p (GND) MOSFET”

Kimimori HAMADA--日本丰田汽车公司功率半导体顾问、PDPlus LLC总裁、ISPSD2021大会主席

Kimimori HAMADA--Power Semiconductor Consultant of Toyota Motor Corporation, President of PDPlus LLC, General Chair of ISPSD2021

14:25-14:50

碳化硅功率MOSFET研究进展

柏松--中电科五十五所教授级高工、宽禁带半导体电力电子器件国家重点实验室主任

BAI Song-- Professor of Nanjing Electronic Devices Institute

14:50-15:15

碳化硅功率半导体器件在电力系统的应用

Application of SiC power devices in power systems

邱宇峰--厦门大学讲座教授、全球能源互联网研究院前院长

QIU Yufeng--Chair Professor ofXiamenUniversity, Former President ofGlobal Energy Interconnection Research Institute, State Grid

15:15-15:35

SiC功率器件短路、雪崩、浪涌等系列可靠性问题的研究Reliability issues of SiC power devicesshort circuit, avalanche and surge current robustness

任娜--浙江大学特聘副研究员

REN Na--Distinguished Associate Professor of Zhejiang University

15:35-15:50

茶歇/Coffee Break

 

15:50-16:10

用于SiC功率器件的先进封装解决方案Advanced packaging solution for SiC power devices

张靖--贺利氏电子中国区研发总监

ZHANGJing--Director of Innovation China of Heraeus Electronics

16:10-16:30

碳化硅功率模块的先进封装测试技术Advanced packaging and testing technology for SiC power modules

曾正--重庆大学电气工程学院副教授

ZENGZheng--AssociateProfessor of SchoolofElectricalEngineering, Chongqing University

16:30-16:50

高压SiC器件封装绝缘问题及面临的挑战High-voltage SiC device packaging insulation problems and challenges

李学宝--华北电力大学副教授

LIXuebao--AssociateProfessorof North China Electric Power University

16:50-17:15

抑制4H-SiC功率器件双极型退化的“复合提高层”设计Design a “recombination-enhancing” layer for preventing 4H-SiC bipolar degradation

杨安丽--深圳第三代半导体研究院研究员

YANGAnli--ResearchFellowofwin semiconductor institute

(备注:日程会有小幅改动,请以会议现场为准!)