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P202: Technologies for Power Electronics and Packaging (GaN & SiC) -IFWS

IFWS Series Conferences


As typical of Wide band-gap semiconductor materials, SiC and GaN represent the development direction of power electronic devices, and have great potential application in the new generation of electric power conversion and management system with high efficiency and small size such as electric vehicles, industrial motors, etc.

SiC/GaN power devices with novel structures and processes, gate drive design, the design and manufacture of power modules with high speed and high efficiency, reliability and applications in SiC/GaN based power system, etc. The latest progress in power electronic devices based on SiC and GaN will be presented.


Session Chairs

    SHENG Kuang——Qiushi Distinguished Professor, Dean of the College of Electrical Engineeringof Zhejiang University

Kevin J. CHEN——Professor of the Hong Kong University of Science and Technology

LU Guoquan——Tenured Professor of Virginia Polytechnic Institute and State University

Session Members

ZHANG Bo——Professor of University of Electronic Science and Technology of China

BAI Song——Professor of Nanjing Electronic Devices Institute

ZHANG Jincheng——Professor of Xidian University

LIANG Huinan——General Manager of Xinguan Technology

LIU Yang——Professor of Sun Yat-sen University


P202:功率电子器件及封装技术 (GaNSiC)/ Technologies for Power Electronics and Packaging (SiC&GaN)

时间:20191126日全天08:30-18:00

地点:深圳会展中心•六层•茉莉厅  (PPT显示比例:16:9)

Time: Nov 26th, 2019 08:30-18:00

Location: Shenzhen Convention and Exhibition Center 6th Floor Jasmine Hall   PPT scale  16:9

主持人

Moderator

   /SHENG Kuang

浙江大学特聘教授,电气工程学院院长 / Qiushi Distinguished Professor, Dean of the College of Electrical Engineeringof Zhejiang University

   /Kevin J. CHEN

香港科技大学教授 /Professor of the Hong Kong University of Science and Technology

陆国权/Guo-Quan LU

美国弗吉尼亚理工大学终身教授 / Tenured Professor of Virginia Polytechnic Institute and State University,

09:00-09:25

碳化硅功率器件最新进展综述

The latest development of SiC power devices

张清纯  北卡罗来纳州立大学客座教授, PowerAmerica研究院功率器件技术主任

Jon Zhang  Visiting professor of north Carolina state university,

09:25-09:50

碳化硅高压电力电子器件及应用进展

New Progress of SiC high voltage power electronic devices and applications

    国家电网全球能源互联网研究院功率半导体研究所副总工,教授

YANGFeiProfessor &Deputy Chief Engineer of Institute of Power Semiconductor at GlobalEnergyInterconnection Research Institute, State Grid

09:50-10:10

改进碳化硅MOSFET RONSP的器件结构和工艺研究

SiC MOSFET Device Structure and Process Study

丁国华  苏州锴威特半导体股份有限公司总裁

DINGGuohua    CEOofSuzhou Convert Semiconductor Co. Ltd.

10:10-10:30

大电流1.2kV SiC JBS器件浪涌能力电热分析

Electro-thermal Analysis of 1.2kV-100A SiC JBS Diodes Under Current Overload

汤益丹  中国科学院微电子研究所

Yidan TANG     Institute of Microelectronics of Chinese Academy of Sciences

10:30-10:50

SiC基石墨烯生物芯片

Graphene-on-SiC for gas detection and bio-sensors

Alexander S. USIKOV    美国Nitride Crystals Inc.首席技术官

Alexander S. USIKOV    CTO of Nitride Crystals Inc.USA

10:50-11:05

茶歇/Coffee Break

11:05-11:30

高电压宽禁带功率半导体封装技术

Packaging of high-voltage wide-bandgap power semiconductors

Christina DiMarino 美国弗吉尼亚理工大学助理教授

Christina DiMarino  Assistant Professor at Virginia Polytechnic Institute and State University, USA

11:30-11:50

高功率和高温IGBT及功率模块封装研究

High power & high temperature IGBT and WIDE bandgap power semiconductor modual package

朱文辉  中南大学微电子系创建主任,教授

ZHUWenhuiFounding &director of the department of microelectronics, Central South University

11:50-12:10

宽禁带器件的设计和TCAD模拟

Design and TCAD Simulation of Widegap Semiconductor Devices

李湛明  加拿大CROSSLIGHT半导体软件公司创立人兼总裁

Simon LI    Founder & CEO of CrosslightSoftware Inc., Canada

12:10-14:00

午休与POSTER交流 /Adjourn&POSTERCommunication

14:00-14:25

GaN Power Devices Beyond 650V and 150C

YifengWU    美国Transphorm Inc.高级副总裁

YifengWU    Sr. V.P. of Engineering, Transphorm Inc., USA

14:25-14:50

基于半绝缘GaN衬底生长的高击穿电压GaN HEMT器件

High-breakdown voltage GaN HEMTs fabricated on semi-insulating GaN substrates Masaaki KUZUHARA日本福井大学教授

Masaaki KUZUHARA    Professor of University of Fukui

14:50-15:10

针对带有反向导通检测功能的EGaN HEMT器件的栅极电源电路设计

A Gate Driver IC for E-mode GaN HEMTs with Reverse Conduction Detection

吴伟东  加拿大多伦多大学教授

Wai Tung NG    Professor at University of Toronto

15:10-15:30

常关型AlGaN/GaN HFET功率器件的发展

Development of Normally-off AlGaN/GaN HFETs for Power Electronics

敖金平  日本德岛大学教授, 西安电子科技大学特聘教授、

AO Jinping    Professor of the University of Tokushima, Specially-Appointed Professor of Xidian University

15:30-15:45

通过高品质GaNSi外延以实现无碳掺杂的高隔离性和高动态表现

High crystal quality GaN-on-Si to achieve excellent isolation and dynamic performance without carbon doping

Atsushi NISHIKAWA    德国ALLOS Semiconductors首席技术官

Atsushi NISHIKAWA    Chief Technology Officer of ALLOS Semiconductors, Germany

15:45-16:00

茶歇/Coffee Break

16:00-16:20

200mm/8英寸GaN功率器件和基于GaN的电路技术:一个对于衬底供应商、制造商和代工工厂的全新机遇

200mm/8-inch GaN power device and GaN-IC technology: a new opportunity for wafer suppliers, foundries and IDMs

Denis MARCON    比利时IMEC的高级业务发展经理

Denis MARCON    Sr. Business Development Manager in IMEC, Belgium

16:20-16:40

200mm 40V-650V EGaNSi材料功率器件技术:从器件、封装、到系统

200mm 40V-650V E-mode GaN-on-Si Power Technology: from Device, Package, Reliability to System

David C. ZHOU    英诺赛科科技有限公司研发中心副总裁

David C. ZHOU    VP of R&D, Innoscience

16:40-17:00

GaN:启动未来

GaN, Power the Future

    加拿大GaNPower International Inc. 副总裁兼联合创始人

Fred Yue Fu    Vice president and Co-founder of GaNPower International Inc., Canada

17:00-17:20

高铝组分的AlGaN/GaN异质结pH传感器

AlGaN/GaN heterostructure pH sensors with high Al composition in the barrier layer

周继禹  日本德岛大学

ZHOU Jiyu    Tokushima University

17:20-17:40

下一代半导体器件外延制备前期的衬底清理技术

In-situ Wafer Cleaning for Pre-Epitaxial Deposition for Next Generation Semiconductor Devices

Ismail I. KASHKOUSH 美国NAURA-Akrion, Inc.首席技术官

Ismail I. KASHKOUSH Chief Technology Officer (CTO) of NAURA-Akrion, Inc., USA