Prof. Chen received his B.S. degree from Peking University, Beijing, China in 1988, and PhD degree from University of Maryland, College Park, USA in 1993. His industry experience includes performing R&D work on III-V high speed device technologies in NTT LSI Laboratories, Japan and Agilent Technologies, USA. Prof. Chen joined Hong Kong University of Science and Technology (HKUST) in 2000, where he is currently a full professor in the Department of Electronic and Computer Engineering. Prof. Chen has more than 300 publications in international journals and conference proceedings. He has been granted 9 US patents on GaN electron device technologies. Currently, his group focuses on developing GaN device technologies for power electronics, RF/microwave and high-temperature electronics applications. He is a Fellow of IEEE. He currently serves as a member in the compound semiconductor device and IC technology committee in IEEE Electron Device Society. He is a guest editor for the special issue of IEEE Transactions on Electron Device on “GaN Electronic Devices” in 2013. He is an editor for IEEE Transactions on Electron Devices, and has also served as an editor for IEEE Transactions on Microwave Theory and Techniques and Japanese Journal of Applied Physics.