Hongyu Yu, currently serves as Professor and Dean of School Of Microelectronics and Deputy Director of Shenzhen Institute Of Wide Gap Semiconductors. He has set up for School of Microelectronics and the third of generation semiconductor research institute in Shenzhen. On behalf of Southern University of Science and Technology, he set up the 5G Innovation Center of Medium and High Frequency Device Manufacturing Industry with Tsinghua University. In collaboration with University of Hong Kong, University of Macau and Hong Kong University of Science and Technology, he enrolled the first experimental class. Established shenzhen third-generation semiconductor key laboratory, Guangdong province GaN device engineering technology center, and served as director. He has been awarded with the "1000 Talents Program for Young Scholars", Peacock project Shenzhen, Pengcheng scholar, Fellow of IET, special government allowance, deputy editor of Science Bulletin(China's top comprehensive academic journal) and editor of Journal of Semicondictor.
He received his BSc, MSc, and PhD from Tsinghua University, University of Toronto, and National University of Singapore, respectively. He is a senior researcher in IMEC Belgium 2004 to 2008. From 2008 to 2011, he served as a assistant professor in the department of Electrical and Electronics Engineering, NanYang Technological University, Singapore.
Professor Yu Hongyu has achieved a series of innovative work in integrated circuit technology and devices, including CMOS, new ultra-high density memory, GaN device and system integration (GaN HEMT). He published more than 370 papers (>160 journal papers + >170 conference papers) with a SCI H-index of 38；Written 4 book chapters, edited 2 books: “Hafnium: Chemical Characteristics, Production and Application” and “Gallium Nitride Power Devices”. Applied/authorized 20 US/European patents and more than 30 Chinese patents. As a PI, he has undertaken ~20 research/talent projects, with a total funding ~ 70 million RMB. He has built a 1,200-square-metre clean room in Southern University of Science and Technology, forming a full 6-inch CMOS lab which hardware will reach the top level in southern China.
Topic：Research on Si-based GaN power device and its related power supply systems