Huili Grace Xing目前是美国康奈尔大学特聘教授，工程学院副院长，电子和计算机工程系和材料科学与工程系 特聘教授，fellow of APS, AAAS and IEEE。从2004年到2014年，她就职于圣母大学。她分别取得了北京大学物理学学士学位（1996年） 理海大学材料科学硕士学位（1998年）和加利福尼亚大学圣巴巴拉分校的电机工程博士学位（2003年）。她的研究重点是III-V型氮化物，2-D晶体，氧化物半导体，最近研究多铁性材料，磁性和超导材料的开发：生长，电子和光电器件，尤其是材料性能与器件开发以及高性能器件之间的相互作用，包括RF / THz器件，隧道场效应晶体管，功率电子器件，DUV发射器和存储器。她曾获得AFOSR青年研究者奖，NSF职业奖和ISCS青年科学家奖。她是APS的会士。H因子70，期刊文章280+，会议文章120+，包括《自然》杂志，《物理评论快报》，《应用物理快报》，《电子设备快报》和IEDM等。
题目 ：Ga2O3 Power Devices and How They Stand up to GaN and SiC?
[Adapted from Ref. 1] It’s of little surprise that there has been a consistent drive toward the use of wider bandgap materials for power electronics. After all, the wider the bandgap, the greater the breakdown field, opening the door to making devices with a higher breakdown voltage for the same material thickness.
However, nature is not always that generous. Typically, a move to a wider bandgap is accompanied by more challenging doping, along with difficulty in making high-quality native substrates. Judged in these terms, gallium oxide appears to offer a sweet spot beyond SiC and GaN.
One of the most promising forms of gallium oxide is its b-phase, which has a bandgap of 4.5-4.7 eV. Luckily, it is easy to dope this oxide n-type in a controllable manner, to realize doping that spans 1015 cm-3 to 1020 cm-3. Thanks to shallow donor levels throughout this range, doping efficiency is high at room temperature. Another encouraging aspect of Ga2O3 is that single-crystal substrates of this material can be readily produced with melt-growth techniques, mirroring the manufacture of those made from silicon. On the other hand, the thermal conductivity Ga2O3 of is rather low, and it is most likely impossible to dope Ga2O3 p-type. Given all these promises and obstacles, is it possible to harvest all the benefits arising from the large bandgap of Ga2O3 and demonstrate devices that are superior to those made from SiC and GaN?
I will reflect on our efforts in seeking answers to these questions in the past many years researching on power devices. The work on Ga2O3 has been in part supported by AFOSR FA9550-17-1-0048, NSF DMREF 1534303, and AFOSR FA9550-18-1-0529; performed in part at Cornell NanoScale Facility, an NNCI member supported by NSF Grant ECCS-1542081.
 W. Li, H. G. Xing et al. Compound Semiconductor, April/May Issue, Page 22-28 (2019).
 W. Li, H. G. Xing et al. in IEEE IEDM Tech. Digest 2018, p. 8.5.1.
 W. Li, H. G. Xing et al. in IEEE IEDM Tech. Digest 2019, p. 4.5.1.